NCTU

Function Material Group

NCTU Functional Materials Group

Selected Publications

We focus on research concerning crystallography, electronic and
magnetism in functional materials.

Home Publication

Lin, Y.-L.; Wu, Y.-H.; Lee, S.-K.; Cheng, C.-W.; Chen, J.-W.; Chung, C.-H.; Song, M.-Y.; Bao, X.; Tseng, Y.-C. Scalable Spin-to-Charge Conversion Device with Nanopatterning. ACS Applied Electronic Materials 2024, 6 (9), 6657-6664.

27 Sep. 2024
Huang, Y.-H.; Cheng, C.-W.; Hsu, J.; Ojha, D. K.; Wu, Y.-H.; Chen, P.-W.; Tseng, Y.-C. Seed Layer Effect on Memristive Behaviors of Trilayer Spin–Orbit Torque Device. ACS Applied Electronic Materials 2024, 6 (9), 6534-6542.

27 Sep. 2024
Y. K. Liang, W. L. Li, Y. L. Lin, D. R. Hsieh, T. Y. Yang, T. T. Chou, C. C. Kei, H. Y. Huang, Y. M. Lin, Y. C. Tseng, T. S. Chao, E. Y. Chang, K. Toprasertpong, S. Takagi, and C. H. Lin, “Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer,” IEEE Transactions on Electron Devices, vol. 71, no. 9, pp. 5788-5791, 2024.

24 Jul. 2024
K.-M. Chen, C.-Y. Lo, S.-C. Chiu, Y.-H. Su, Y.-J. Chang, G.-L. Chen, H.-H. Lee, X.-Y. Huang, C.-Y. Shih, C.-Y. Wang, I.-J. Wang, S.-Y. Yang, Y.-C. Hsin, J.-H. Wei, S.-S. Sheu, W.-C. Lo, S.-C. Chang, and Y.-C. Tseng, “Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing,” Applied Physics Letters, vol. 125, no. 1, 2024.

05 Jul. 2024
Ojha, D. K.; Huang, Y.-H.; Lin, Y.-L.; Chatterjee, R.; Chang, W.-Y.; Tseng, Y.-C. Neuromorphic Computing with Emerging Antiferromagnetic Ordering in Spin–Orbit Torque Devices. Nano Letters 2024, 24 (25), 7706-7715.

05 Jul. 2024
T.L. Nguyen, T. Mazet, É. Gaudry, D. Malterre, F.H. Chang, H.J. Lin, C.T. Chen, Y.C. Tseng, A. Chainani*, "Element-specific Curie temperatures and Heisenberg criticality in ferrimagnetic Gd6(Mn1−xFex)23 via Kouvel-Fisher analysis.", Commun Materials 5, 68 (2024).

08 May. 2024
Y.K. Liang, J.Y. Zheng, Y.L. Lin, Y.C. LuD.R. Hsieh, T.T. Chou, C.C. Kei, H.Y. Huang, Y.M Lin, Y.C.Tseng, T.S.Chao, E.Y.Chang, K. Toprasertpong, S. Takagi, C.H. Lin*, "Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel", IEEE T Electron Dev,1, (2024)

11 Apr. 2024
S.P. Chiniwar, Y.C. Hsieh, C.H. Shih, C.Y Teng, J.L. Yang, C. Hu, B.H Lin, M.T Tang, Y.C. Tseng*, "Ferroelectric Enhancement in a TiN/Hf1-xZrxO2/W Device with Controlled Oxidation of the Bottom Electrode" , ACS Appl. Elec. Mater.,6,1078(2024)

03 Feb. 2024
K.S. Li, M.K. Huang, Y.H. Wang, Y.C. Tseng*, and C.J. Su* , "Wafer-Scale Fabrication of Al/MoS2/Poly-Si Memristors and Insight of Mechanism on the Resistive Switching" , ACS Appl. Elec. Mater.,6,777(2024)

03 Feb. 2024
T.L Nguyen, C.C. Yang, C.H. Wang, Y.W. Yang, T. Mazet, E. Gaudry, D. Malterre, M. Yoshimura, Y. F. Liao, H. Ishii, N. Hiraoka, H. J. Lin, Y.C. Tseng*, and A. Chainani*,"Crucial role of d-d Coulomb correlations in the magnetocaloric ferrimagnets Gd6(Mn1−xMx)23 (M = Fe, Co)",Physical Review B ,109,035102(2024)

05 Dec. 2023
T.C. Hsin, H.Y. Lin, Y.L. Lin, J.W. Chen, and Y.C. Tseng*, "Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States", ACS Appl. Elec. Mater., 5,6315(2023)

14 Dec. 2023
Y.K. Liang, J.Y. Zheng, Y.L. Lin, Y. Chen, K.L. Chen, D.R. Hsieh, L.C. Peng, C.H. Chiu ,Y.C. Lu , T.T. Chou, C.C. Kei, C.C. Lu, H.Y. Huang,Y.M. Lin, Y.C. Tseng, T.S. Chao, E. Y. Hang , and C.H. Lin*,“First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics”, International Electron Devices Meeting (IEDM) 2023

01 Nov. 2023
Y.K. Liang,W.Li. Li, J.Y. Zheng, Y.L. Lin, Y.C. Lu, C.H. Chiu, D.R. Hsieh, T.T. Chou, C.C. Kei, H.Y. Huang, Y.M. Lin, Y.C. Tseng, T.S. Chao, E.Yi. Chang,and C.H. Lin*, "Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics", IEEE EDL, 44 ,1644(2023)

03 Sep. 2023
C.Y. Teng, C.C. Cheng, K.S. Li, C.M. Hu, J.M. Lin, B.H. Lin, M.T. Tang and Y.C. Tseng*, “Optimizing the Ferroelectric Properties of Hf1-xZrxO2 Films via Crystal Orientation”, ACS Appl. Elec. Mater., 5,1114(2023)

18 Apr. 2023
D.K. Ojha, R. Chatterjee, Y.L. Lin, Y.H. Wu, P.W. Chen, and Y.C. Tseng*, “Spin-torque Efficiency Enhanced in Sputtered Topological Insulator by Interface Engineering”, J. Mag. Mag. Mater., 572,170638(2023)

18 Apr. 2023
Y. K. Liang, J. Y. Zheng, Y. L. Lin, W. L. Li, Y. C. Lu, D. R. Hsieh, L. C. Peng, T. T. Chou, C. C. Kei, C. C. Lu, H. Y. Huang, Y. C. Tseng, T. S. Chao, Edward Y. Chang, and C. H. Lin*, “Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics”, 2023 Symposium on VLSI Technology and Circuits, 2023.

18 Apr. 2023
A.K. Anbalagan, F.C. Hu, W.K. Chan, A.C. Gandhi, S. Gupta,M. Chaudhary, K.W. Chuang, A.K. Ramesh, T. Billo, A. Sabbah, C.Y. Chiang, Y.C. Tseng, Y.L. Chueh, S.Y. Wu, N.H. Tai, H.Y. Tiffany Chen*, and C.H. Lee*, “Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS2 Sputtered Few-Layered Thin Films”, ACS Nano, 17,6555(2023)

18 Apr. 2023
C.C. Yang, M.H. Tsai, Z.R. Yang, Y.C. Tseng*, and C.H. Wang*, "Revealing the Surface Species Evolution on Low‐loading Platinum in an Electrochemical Redox Reaction by Operando Ambient‐Pressure X‐ray Photoelectron Spectroscopy", ChemCatChem, 15,12(2023)

18 Apr. 2023
M.H. Wu, I.T. Wang, M.C. Hong, K.M. Chen, Y.C. Tseng, J.H. Wei, and T.H. Hou,"Stochastic Switching in a Magnetic-Tunnel-Junction Neuron and a Bias-Dependent Néel-Arrhenius Model",Phys. Rev. Appl., 18,064034(2022)

28 Dec. 2022
C. C. Yang, M. H. Tsai, Z. R. Yang, Y. W. Yang,* Y. C. Tseng,* and C. H. Wang*, “An Effective Charge Neutralization Enabled by Graphene Overlayer in Ambient Pressure XPS Measurements of Insulators”, Adv. Mater. Interfaces, 10,2201926(2022)

26 Dec. 2022
T. Ly Nguyen, Th. Mazet, D. Malterre, H. J. Lin, M. Yoshimura, Y. F. Liao, H. Ishii, N. Hiraoka, Y. C. Tseng, and A. Chainani, "Hard x-ray photoemission spectroscopy of the ferrimagnetic series Gd6(Mn1-xFex)23", Phys. Rev. B, 106,045144(2022)

29 Jul. 2022
J. C. Chung, A. K. Anbalagan, C. L. Fan, Y. H. Lia, A. K. Ramesh, S. Gupta, Y. C. Tseng, N. H. Tai, and C. H. Lee*, “Investigating the mechanism of magnetic phase transition temperature of FeRh thin films by doping copper impurities”, Mater. Chem. Phys., 275,125252(2022)

28 Jun. 2022
Y. J. Chang, F. M. Chen, K. M. Chen, S. Y. Yang, Y. C. Hsin, S. Z. Rahaman, I. J. Wang, H. H. Lee, Y. H. Su, G. L. Chen, C. Y. Shih, S. C. Chiu, J. H. Wei, S. S. Sheu, W. C. Lo, Y. C. Tseng, C. H. Lai, D. Tang, and C. I. Wu, "The thermal stability improvement of spin-orbit-torque (SOT) devices with a thin PtMn insertion," International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),2022.

28 Jun. 2022
A. K Ramesh, Y.T. Chou, M.T. Lu, P. S. and Y.C. Tseng*, "Biological sensing using anomalous hall effect devices", Nanotechnology, 33,335502(2022)

26 May. 2022
C. W. Cheng, K. M. Chen, J. H. Wei, Y. C. Hsin, S. S. Sheu, C. I. Wu and Y. C. Tseng*, “Stray field and combined effects on device miniaturization of the magnetic tunnel junctions”, J. Phys. D, 55,195002(2022)

09 Mar. 2022
A. Ramesh, C. W. Cheng, T. C. Ku, V. Rana, P. Gangwar, P. Singh and Y. C. Tseng*,” Interface imperfection effects on spin transfer torque switching: an atomistic approach”, J. Phys. D, 55,215002(2022)

09 Mar. 2022
Y. H. Huang, C. Y. Yang*, C. W. Cheng, A. Lee, C. H. Tseng, H. Wu, Q. Pan, X. Che, C. H. Lai, K. L. Wang, H. J. Lin and Y. C. Tseng*, “A spin-orbit torque ratchet at ferromagnet/antiferromagnet interface via exchange spring“, Adv. Funct. Mater., 32,2111653(2022)

09 Mar. 2022
T. Ly Nguyen, J. Rubio-Zuazo, G. R. Castro, F. M. F. de Groot, N. Hariharan, S. Elizabeth, M. Oura, Y. C. Tseng, H. J. Lin, and A. Chainani, “Electronic structure of Tb0.5Sr0.5MnO3”, Phys. Rev. B., 103,245131(2021)

02 Nov. 2021
S. J. Chang, C. Y. Teng, Y. J. Lin, T. M. Wu, M. H. Lee, Lee, B. H. Lin, M. T. Tang, T. S. Wu C. M. Hu, E. Y. T. Tang*, and Y. C. Tseng*, “Visualizing ferroelectric uniformity of Hf1-xZrxO2 films using x-ray mapping”, ACS Appl. Mater. Interfaces, 13,29212(2021)

02 Nov. 2021
A. Ramesh, K. M. Chen, Y. J. Lin, P. Singh, J. H. Wei, Y. C. Hsin, C. I. Wu, and Y. C. Tseng*, “Insertion trade-off effects on the spin-transfer torque memory explored by in-situ x-ray”, ACS Appl. Electron. Mater., 3,4047(2021)

02 Nov. 2021
Y. J. Lin, C. Y. Teng, C.M. Hu, C. J. Su,* and Y. C. Tseng,*” Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance”, Appl. Phys. Lett., 119,192102(2021)

02 Nov. 2021
Y.J. Lin,C.Y. Teng,S.J. Chang,Y.F. Liao,C. Hu,C.J. Su*,Y.C. Tseng*, ”Role of electrode-induced oxygen vacancies in regulating polarization wake-up in ferroelectric capacitors”, Appl. Surf. Sci., 528,147014(2020)

15 Jul. 2020
K.W. Chen, S.J. Chang, E. Y.T. Tang, C.P. Lin, T.H. Hou, C.H. Chen, and Y.C. Tseng*,"Pulse-Mediated Electronic Tuning of the MoS2–Perovskite Ferroelectric Field Effect Transistors", ACS Appl. Electron. Mater., 2,3843(2020)

23 Dec. 2020
C. J. Su,*, M. K. Huang , K. S. Lee , V. P. H. Hu , Y. F. Huang , B. C. Zheng , C. H. Yao , N. C. Lin , K. H. Kao , T. C. Hong , P. J. Sung , C. T. Wu , T. Y. Yu , K. L. Lin , Y. C. Tseng , C. L. Lin , Y. J. Lee*, T. S. Chao ,J. Y. Li1, , W. F. Wu , J. M. Shieh , Y. H. Wang and W. K. Yeh",3D Integration of Vertical-Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers", IEDM,.2020.

11 Dec. 2020
K.M. Chen, C.W. Cheng, J.H. Wei, Y.C. Hsin, and Y.C. Tseng*," Effects of synthetic antiferromagnetic coupling on back-hopping of spin-transfer torque devices", Appl. Phys. Lett., 117,072405(2020)

21 Aug. 2020
S. J. Chang, M. H. Chung, M. Y. Kao, S. F. Lee, Y. H. Yu, C. C. Kaun, T. Nakamura, N. Sasabe, S. J. Chu and Y. C. Tseng*, “GdFe0.8Ni0.2O3: a multiferroic material for low-power spintronic devices with high storage capacity", ACS Appl. Mater. Interfaces, 11,31562(2019)

03 Mar. 2020
S. J. Chang, S. Y. Chen, P. W. Chen, S. J. Huang, and Y. C. Tseng*, “Pulse-driven non-volatile perovskite memory with photovoltaic read-out chractereristics”, ACS Appl. Mater. Interfaces, 11,33810(2019)

03 Mar. 2020
J. Y. Liang, Y. J. Chou, W. C. Lin, H. J. Lin, P. W. Chen, and Y. C. Tseng*,”Realization of an H2/CO dual gas sensor using CoPd magnetic structures”, Appl. Phys. Lett., 113,182401(2018)

03 Mar. 2020
T. N. Tran, T. N. Lam, C. Y. Yang, W. C. Lin, P. W. Chen, and Y. C. Tseng*,” Superparamagnetic ground state of CoFeB/MgO magnetic tunnel junction with dual-barrier”, Appl. Surf. Sci., 457,529(2018)

03 Mar. 2020
C.Y. Yang,Y.H. Chiu,K.A. Tsai,H.S. Hsu,J.X. Lin,P.J. Ho,P.W. Chen,Y.J. Hsu,Y.C. Tseng*, “Tailor magnetic order and spin-polarized gap states of opto-spintronic compounds by carrier mediation”, J. Magn. Magn. Mater., 460,78(2018)

03 Mar. 2020
S. J. Chang, P. Y. Chuang, C. W. Chong, Y. J. Chen, J. C. A. Huang, P. W. Chen, and Y. C. Tseng*, “Heterostructured ferromagnet-topological insulators with dual-phase magnetic properties”, RSC Advances , 8,7785(2018)

03 Mar. 2020
T,N. Lam, Y.L. Huang, K.C. Weng, Y.L. Lai,M.W. Lin, Y.H. Chu, H.J. Lin, C.C. Kaun,D.H. Wei, Y.C. Tseng* Y.J. Hsu* " Spin filtering of a termination-controlled LSMO/Alq3 heterojunction for an organic spin valve",J. Mater., 5,9128(2017)

03 Mar. 2020
J. Y. Liang, Y. C. Pai, T. M. Lam, W. C. Lin, T. S. Chan, C. H. Lai, and Y. C. Tseng*,”Using magnetic structure of Co40Pd60/Cu for the sensing of hydrogen”, Appl. Phys. Lett., 111,023503(2017)

03 Mar. 2020
S. J. Chang, P. C. Chang, W. C. Lin, S. H. Lo, L. C. Chang, S. F. Lee and Y. C. Tseng*, “Voltage-induced interface reconstruction and electrical instability of the ferromagnet-semiconductor device”, Scientific Reports, 7,339(2017)

08 Jul. 2019
C. Y. Yang, K. C. Chiu, S. J. Chang, X. Q. Zhang, J. Y. Liang, C. S. Chung, H. Pan, J. M. Wu, Y. C. Tseng*, and Y. H. Lee, “Phase-driven magneto-electrical characteristics of single-layer MoS2”, Nanoscale, 8,5627(2016)

27 Sep. 2019
J. Y. Liang, T. N. Lam, Y. C. Lin, S. J. Chang, H. J. Lin, and Y. C. Tseng*, “Atomic origin of the spin-polarization of the Co2FeAl Heusler compound”, J. Phys., 8,5633(2016)

27 Sep. 2019
S. J. Chang, T. M. Lam, C. Y. Yang, Y. L. Chen, Y. H. Chu, Y. L. Chueh, and Y. C. Tseng*, “Tunable complex magnetic states of the epitaxial metal oxide nanocrystals fabricated by phase decomposition method”, J. Phys., 49,275001(2016)

27 Sep. 2019
M. J. Deng*, C. Z. Song, C. C. Wang, Y. C. Tseng, J. M. Chen and K. T. Lu, “ Low cost facile synthesis of large-area cobalt hydroxide nanorods with remarkable pseudocapacitance”, ACS Appl. Mater. Inter., 7,9147(2015)

27 Sep. 2019
C. Y. Yang, S. J. Chang, M. H. Lee, K. H. Shen, S.Yi. Yang, H. J. Lin, and Y. C. Tseng*, “Competing anisotropy-tunneling correlation of the CoFeB/MgO perpendicular magnetic tunnel junction: an electronic approach”, Scientific Reports, 5,17169(2015)

27 Sep. 2019