NCTU
Function Material Group
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Principal Investigator
MRAM team
Magnetic Sensor team
NCFET team
Advanced Electronics team
MESO team
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Magneto-electric spin-orbit (MESO) logic
Magnetoresistive Random Access Memory (MRAM)
Negative capacitance field effect transistor (NCFET)
Advanced Electronics
Selected Publications
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NCTU Functional Materials Group
Selected Publications
We focus on research concerning crystallography, electronic and
magnetism in functional materials.
2024
2023
2022
2021
2020
2019
2018
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Publication
Y.J. Lin,C.Y. Teng,S.J. Chang,Y.F. Liao,C. Hu,C.J. Su*,Y.C. Tseng*, ”Role of electrode-induced oxygen vacancies in regulating polarization wake-up in ferroelectric capacitors”, Appl. Surf. Sci., 528,147014(2020)
15 Jul. 2020
K.W. Chen, S.J. Chang, E. Y.T. Tang, C.P. Lin, T.H. Hou, C.H. Chen, and Y.C. Tseng*,"Pulse-Mediated Electronic Tuning of the MoS2–Perovskite Ferroelectric Field Effect Transistors", ACS Appl. Electron. Mater., 2,3843(2020)
23 Dec. 2020
C. J. Su,*, M. K. Huang , K. S. Lee , V. P. H. Hu , Y. F. Huang , B. C. Zheng , C. H. Yao , N. C. Lin , K. H. Kao , T. C. Hong , P. J. Sung , C. T. Wu , T. Y. Yu , K. L. Lin , Y. C. Tseng , C. L. Lin , Y. J. Lee*, T. S. Chao ,J. Y. Li1, , W. F. Wu , J. M. Shieh , Y. H. Wang and W. K. Yeh",3D Integration of Vertical-Stacking of MoS2 and Si CMOS Featuring Embedded 2T1R Configuration Demonstrated on Full Wafers", IEDM,.2020.
11 Dec. 2020
K.M. Chen, C.W. Cheng, J.H. Wei, Y.C. Hsin, and Y.C. Tseng*," Effects of synthetic antiferromagnetic coupling on back-hopping of spin-transfer torque devices", Appl. Phys. Lett., 117,072405(2020)
21 Aug. 2020
NCTU
Function Material Group