NCTU
Function Material Group
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MRAM team
Magnetic Sensor team
NCFET team
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Magneto-electric spin-orbit (MESO) logic
Magnetoresistive Random Access Memory (MRAM)
Negative capacitance field effect transistor (NCFET)
Advanced Electronics
Selected Publications
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NCTU Functional Materials Group
Selected Publications
We focus on research concerning crystallography, electronic and
magnetism in functional materials.
2024
2023
2022
2021
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Publication
T.C. Hsin, H.Y. Lin, Y.L. Lin, J.W. Chen, and Y.C. Tseng*, "Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States", ACS Appl. Elec. Mater., 5,6315(2023)
14 Dec. 2023
Y.K. Liang, J.Y. Zheng, Y.L. Lin, Y. Chen, K.L. Chen, D.R. Hsieh, L.C. Peng, C.H. Chiu ,Y.C. Lu , T.T. Chou, C.C. Kei, C.C. Lu, H.Y. Huang,Y.M. Lin, Y.C. Tseng, T.S. Chao, E. Y. Hang , and C.H. Lin*,“First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics”, International Electron Devices Meeting (IEDM) 2023
01 Nov. 2023
Y.K. Liang,W.Li. Li, J.Y. Zheng, Y.L. Lin, Y.C. Lu, C.H. Chiu, D.R. Hsieh, T.T. Chou, C.C. Kei, H.Y. Huang, Y.M. Lin, Y.C. Tseng, T.S. Chao, E.Yi. Chang,and C.H. Lin*, "Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics", IEEE EDL, 44 ,1644(2023)
03 Sep. 2023
C.Y. Teng, C.C. Cheng, K.S. Li, C.M. Hu, J.M. Lin, B.H. Lin, M.T. Tang and Y.C. Tseng*, “Optimizing the Ferroelectric Properties of Hf1-xZrxO2 Films via Crystal Orientation”, ACS Appl. Elec. Mater., 5,1114(2023)
18 Apr. 2023
D.K. Ojha, R. Chatterjee, Y.L. Lin, Y.H. Wu, P.W. Chen, and Y.C. Tseng*, “Spin-torque Efficiency Enhanced in Sputtered Topological Insulator by Interface Engineering”, J. Mag. Mag. Mater., 572,170638(2023)
18 Apr. 2023
Y. K. Liang, J. Y. Zheng, Y. L. Lin, W. L. Li, Y. C. Lu, D. R. Hsieh, L. C. Peng, T. T. Chou, C. C. Kei, C. C. Lu, H. Y. Huang, Y. C. Tseng, T. S. Chao, Edward Y. Chang, and C. H. Lin*, “Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics”, 2023 Symposium on VLSI Technology and Circuits, 2023.
18 Apr. 2023
A.K. Anbalagan, F.C. Hu, W.K. Chan, A.C. Gandhi, S. Gupta,M. Chaudhary, K.W. Chuang, A.K. Ramesh, T. Billo, A. Sabbah, C.Y. Chiang, Y.C. Tseng, Y.L. Chueh, S.Y. Wu, N.H. Tai, H.Y. Tiffany Chen*, and C.H. Lee*, “Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS2 Sputtered Few-Layered Thin Films”, ACS Nano, 17,6555(2023)
18 Apr. 2023
C.C. Yang, M.H. Tsai, Z.R. Yang, Y.C. Tseng*, and C.H. Wang*, "Revealing the Surface Species Evolution on Low‐loading Platinum in an Electrochemical Redox Reaction by Operando Ambient‐Pressure X‐ray Photoelectron Spectroscopy", ChemCatChem, 15,12(2023)
18 Apr. 2023
NCTU
Function Material Group