NCTU
Function Material Group
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About Us
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Principal Investigator
MRAM team
Magnetic Sensor team
NCFET team
Advanced Electronics team
MESO team
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Magneto-electric spin-orbit (MESO) logic
Magnetoresistive Random Access Memory (MRAM)
Negative capacitance field effect transistor (NCFET)
Advanced Electronics
Selected Publications
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NCTU Functional Materials Group
Selected Publications
We focus on research concerning crystallography, electronic and
magnetism in functional materials.
2024
2023
2022
2021
2020
2019
2018
2017
2016
2015
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Publication
M.H. Wu, I.T. Wang, M.C. Hong, K.M. Chen, Y.C. Tseng, J.H. Wei, and T.H. Hou,"Stochastic Switching in a Magnetic-Tunnel-Junction Neuron and a Bias-Dependent Néel-Arrhenius Model",Phys. Rev. Appl., 18,064034(2022)
28 Dec. 2022
C. C. Yang, M. H. Tsai, Z. R. Yang, Y. W. Yang,* Y. C. Tseng,* and C. H. Wang*, “An Effective Charge Neutralization Enabled by Graphene Overlayer in Ambient Pressure XPS Measurements of Insulators”, Adv. Mater. Interfaces, 10,2201926(2022)
26 Dec. 2022
T. Ly Nguyen, Th. Mazet, D. Malterre, H. J. Lin, M. Yoshimura, Y. F. Liao, H. Ishii, N. Hiraoka, Y. C. Tseng, and A. Chainani, "Hard x-ray photoemission spectroscopy of the ferrimagnetic series Gd6(Mn1-xFex)23", Phys. Rev. B, 106,045144(2022)
29 Jul. 2022
J. C. Chung, A. K. Anbalagan, C. L. Fan, Y. H. Lia, A. K. Ramesh, S. Gupta, Y. C. Tseng, N. H. Tai, and C. H. Lee*, “Investigating the mechanism of magnetic phase transition temperature of FeRh thin films by doping copper impurities”, Mater. Chem. Phys., 275,125252(2022)
28 Jun. 2022
Y. J. Chang, F. M. Chen, K. M. Chen, S. Y. Yang, Y. C. Hsin, S. Z. Rahaman, I. J. Wang, H. H. Lee, Y. H. Su, G. L. Chen, C. Y. Shih, S. C. Chiu, J. H. Wei, S. S. Sheu, W. C. Lo, Y. C. Tseng, C. H. Lai, D. Tang, and C. I. Wu, "The thermal stability improvement of spin-orbit-torque (SOT) devices with a thin PtMn insertion," International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),2022.
28 Jun. 2022
A. K Ramesh, Y.T. Chou, M.T. Lu, P. S. and Y.C. Tseng*, "Biological sensing using anomalous hall effect devices", Nanotechnology, 33,335502(2022)
26 May. 2022
C. W. Cheng, K. M. Chen, J. H. Wei, Y. C. Hsin, S. S. Sheu, C. I. Wu and Y. C. Tseng*, “Stray field and combined effects on device miniaturization of the magnetic tunnel junctions”, J. Phys. D, 55,195002(2022)
09 Mar. 2022
A. Ramesh, C. W. Cheng, T. C. Ku, V. Rana, P. Gangwar, P. Singh and Y. C. Tseng*,” Interface imperfection effects on spin transfer torque switching: an atomistic approach”, J. Phys. D, 55,215002(2022)
09 Mar. 2022
Y. H. Huang, C. Y. Yang*, C. W. Cheng, A. Lee, C. H. Tseng, H. Wu, Q. Pan, X. Che, C. H. Lai, K. L. Wang, H. J. Lin and Y. C. Tseng*, “A spin-orbit torque ratchet at ferromagnet/antiferromagnet interface via exchange spring“, Adv. Funct. Mater., 32,2111653(2022)
09 Mar. 2022
NCTU
Function Material Group