NCTU

Function Material Group

NCTU Functional Materials Group

Selected Publications

We focus on research concerning crystallography, electronic and
magnetism in functional materials.

Home Publication

Lin, Y.-L.; Wu, Y.-H.; Lee, S.-K.; Cheng, C.-W.; Chen, J.-W.; Chung, C.-H.; Song, M.-Y.; Bao, X.; Tseng, Y.-C. Scalable Spin-to-Charge Conversion Device with Nanopatterning. ACS Applied Electronic Materials 2024, 6 (9), 6657-6664.

27 Sep. 2024
Huang, Y.-H.; Cheng, C.-W.; Hsu, J.; Ojha, D. K.; Wu, Y.-H.; Chen, P.-W.; Tseng, Y.-C. Seed Layer Effect on Memristive Behaviors of Trilayer Spin–Orbit Torque Device. ACS Applied Electronic Materials 2024, 6 (9), 6534-6542.

27 Sep. 2024
Y. K. Liang, W. L. Li, Y. L. Lin, D. R. Hsieh, T. Y. Yang, T. T. Chou, C. C. Kei, H. Y. Huang, Y. M. Lin, Y. C. Tseng, T. S. Chao, E. Y. Chang, K. Toprasertpong, S. Takagi, and C. H. Lin, “Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer,” IEEE Transactions on Electron Devices, vol. 71, no. 9, pp. 5788-5791, 2024.

24 Jul. 2024
K.-M. Chen, C.-Y. Lo, S.-C. Chiu, Y.-H. Su, Y.-J. Chang, G.-L. Chen, H.-H. Lee, X.-Y. Huang, C.-Y. Shih, C.-Y. Wang, I.-J. Wang, S.-Y. Yang, Y.-C. Hsin, J.-H. Wei, S.-S. Sheu, W.-C. Lo, S.-C. Chang, and Y.-C. Tseng, “Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing,” Applied Physics Letters, vol. 125, no. 1, 2024.

05 Jul. 2024
Ojha, D. K.; Huang, Y.-H.; Lin, Y.-L.; Chatterjee, R.; Chang, W.-Y.; Tseng, Y.-C. Neuromorphic Computing with Emerging Antiferromagnetic Ordering in Spin–Orbit Torque Devices. Nano Letters 2024, 24 (25), 7706-7715.

05 Jul. 2024
T.L. Nguyen, T. Mazet, É. Gaudry, D. Malterre, F.H. Chang, H.J. Lin, C.T. Chen, Y.C. Tseng, A. Chainani*, "Element-specific Curie temperatures and Heisenberg criticality in ferrimagnetic Gd6(Mn1−xFex)23 via Kouvel-Fisher analysis.", Commun Materials 5, 68 (2024).

08 May. 2024
Y.K. Liang, J.Y. Zheng, Y.L. Lin, Y.C. LuD.R. Hsieh, T.T. Chou, C.C. Kei, H.Y. Huang, Y.M Lin, Y.C.Tseng, T.S.Chao, E.Y.Chang, K. Toprasertpong, S. Takagi, C.H. Lin*, "Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel", IEEE T Electron Dev,1, (2024)

11 Apr. 2024
S.P. Chiniwar, Y.C. Hsieh, C.H. Shih, C.Y Teng, J.L. Yang, C. Hu, B.H Lin, M.T Tang, Y.C. Tseng*, "Ferroelectric Enhancement in a TiN/Hf1-xZrxO2/W Device with Controlled Oxidation of the Bottom Electrode" , ACS Appl. Elec. Mater.,6,1078(2024)

03 Feb. 2024
K.S. Li, M.K. Huang, Y.H. Wang, Y.C. Tseng*, and C.J. Su* , "Wafer-Scale Fabrication of Al/MoS2/Poly-Si Memristors and Insight of Mechanism on the Resistive Switching" , ACS Appl. Elec. Mater.,6,777(2024)

03 Feb. 2024
T.L Nguyen, C.C. Yang, C.H. Wang, Y.W. Yang, T. Mazet, E. Gaudry, D. Malterre, M. Yoshimura, Y. F. Liao, H. Ishii, N. Hiraoka, H. J. Lin, Y.C. Tseng*, and A. Chainani*,"Crucial role of d-d Coulomb correlations in the magnetocaloric ferrimagnets Gd6(Mn1−xMx)23 (M = Fe, Co)",Physical Review B ,109,035102(2024)

05 Dec. 2023