NCTU
Function Material Group
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Principal Investigator
MRAM team
Magnetic Sensor team
NCFET team
Advanced Electronics team
MESO team
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Magneto-electric spin-orbit (MESO) logic
Magnetoresistive Random Access Memory (MRAM)
Negative capacitance field effect transistor (NCFET)
Advanced Electronics
Selected Publications
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NCTU Functional Materials Group
Selected Publications
We focus on research concerning crystallography, electronic and
magnetism in functional materials.
2024
2023
2022
2021
2020
2019
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Publication
T. Ly Nguyen, J. Rubio-Zuazo, G. R. Castro, F. M. F. de Groot, N. Hariharan, S. Elizabeth, M. Oura, Y. C. Tseng, H. J. Lin, and A. Chainani, “Electronic structure of Tb0.5Sr0.5MnO3”, Phys. Rev. B., 103,245131(2021)
02 Nov. 2021
S. J. Chang, C. Y. Teng, Y. J. Lin, T. M. Wu, M. H. Lee, Lee, B. H. Lin, M. T. Tang, T. S. Wu C. M. Hu, E. Y. T. Tang*, and Y. C. Tseng*, “Visualizing ferroelectric uniformity of Hf1-xZrxO2 films using x-ray mapping”, ACS Appl. Mater. Interfaces, 13,29212(2021)
02 Nov. 2021
A. Ramesh, K. M. Chen, Y. J. Lin, P. Singh, J. H. Wei, Y. C. Hsin, C. I. Wu, and Y. C. Tseng*, “Insertion trade-off effects on the spin-transfer torque memory explored by in-situ x-ray”, ACS Appl. Electron. Mater., 3,4047(2021)
02 Nov. 2021
Y. J. Lin, C. Y. Teng, C.M. Hu, C. J. Su,* and Y. C. Tseng,*” Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance”, Appl. Phys. Lett., 119,192102(2021)
02 Nov. 2021
NCTU
Function Material Group